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2SK3818 rev.0 i page 1 of 4 i www.onsemi.com ordering number : enn8056 2SK3818 n-channel silicon mosfet general-purpose switching device applications features low on-resistance. ultrahigh-speed switching. 4v drive. motor drive, dc / dc converter. a valanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 74 a drain current (pulse) i dp pw 10 s, duty cycle 1% 296 a allowable power dissipation p d 1.65 w t c=25 c75w channel temperature tch 150 c storage temperature tstg - -55 to +150 c a valanche enargy (single pulse) *1 e as 410 mj a valanche current *2 i av 74 a note : * 1 v dd =20v, l=100 h, i av =74a * 2 l 100 h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =37a 27 45 s static drain-to-source on-state resistance r ds (on)1 i d =37a, v gs =10v 10 13 m ? r ds (on)2 i d =37a, v gs =4v 13 18 m ? marking : k3818 continued on next page. ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 2SK3818/d
2SK3818 rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 5250 pf output capacitance coss v ds =20v, f=1mhz 780 pf reverse transfer capacitance crss v ds =20v, f=1mhz 525 pf t urn-on delay time t d (on) see specified test circuit. 38 ns rise time t r see specified test circuit. 315 ns t urn-off delay time t d (off) see specified test circuit. 370 ns fall time t f see specified test circuit. 310 ns t otal gate charge qg v ds =30v, v gs =10v, i d =74a 100 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =74a 18 nc gate-to-drain ?iller?charge qgd v ds =30v, v gs =10v, i d =74a 16 nc diode forward voltage v sd i s =74a, v gs =0 1.13 1.5 v package dimensions package dimensions unit : mm unit : mm 2093a 2090a switching time test circuit unclamped inductive test circuit 1 : gate 2 : drain 3 : source sanyo : smp 10.2 20.9 11.5 9.4 0.8 1.6 1.2 0.9 11.0 8.8 4.5 1.3 0.4 2.55 2.55 2.7 123 pw=10 s d.c. 1% p. g 50 ? g s d i d =37a r l =0.81 ? v dd =30v v out 2SK3818 v in 10v 0v v in 50 ? 50 ? rg dut v dd l 15v 0v 1 : gate 2 : drain 3 : source sanyo : smp-fd 10.2 1.2 2.55 2.55 2.55 2.55 4.5 0 to 0.3 0.4 1.3 9.9 3.0 2.7 1.35 8.8 1.4 1.5max 0.8 0.8 123
2SK3818 rev.0 i page 3 of 4 i www.onsemi.com it07836 it07837 it07834 it07835 - -50 --25 150 030 10 15 20 25 5 1000 10000 it07841 it07839 it07838 0.1 1.0 23 57 3 10 1.0 1.4 1.2 0.4 0.8 0.6 1.0 0.2 0.01 0.1 5 7 3 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 7 5 7 5 2 3 5 7 100 2 3 2 10 23 57 3 57 2 100 3456789 210 0 20 30 25 10 15 5 0 20 30 25 5 10 15 0255 075 100 125 7 5 3 7 5 i d =37 a tc= 75 c 25 c -- 25 c i d =37a, v gs =4v i d =37a, v gs =10v tc= - -25 c 75 c 25 c v ds =10v tc= 75 c 25 c -- 25 c v gs =0 f=1mhz coss ciss crss it07840 0.1 23 1.0 57 2 3 57 2 3 57 100 10 100 1000 2 3 5 7 2 3 5 7 t d (off) t f t d (on) t r v dd =30v v gs =10v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc ? y fs ? -- i d i f -- v sd ciss, coss, crss -- v ds sw time -- i d static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain current, i d -- a f orward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v f orward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns case temperature, tc -- c 0.2 0.4 0.6 0.8 1.0 2.0 1.4 1.6 1.8 1.2 0 0 10 20 30 70 80 90 60 50 40 0 10 20 30 70 80 90 60 50 40 1.5 1.0 0.5 2.0 2.5 3.0 0 4.5 4.0 3.5 v gs =3v 8v 10v tc= 25 c 25 c - -25 c 25 c tc= - -25 c 75 c tc= 75 c v ds =10v 4v 6v
2SK3818 rev.0 i page 4 of 4 i www.onsemi.com it07811 it07843 0 0 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 0.1 1.0 10 100 2 3 5 3 2 5 7 7 2 3 5 7 2 3 5 7 23 57 23 57 23 57 1.0 0.1 10 100 i dp =296a i d =74a 100 s 1ms 10ms 100ms dc operation 10 s operation in this area is limited by r ds (on). it07842 01020 40 30 50 60 100 70 80 90 0 2 4 6 8 9 1 3 5 7 10 v ds =30v i d =74a it07844 0 0 20 40 60 80 100 120 90 60 80 70 75 50 140 160 40 30 20 10 a s o p d -- ta p d -- tc v gs -- qg gate-to-source voltage, v gs -- v amibient tamperature, ta -- c allowable power dissipation, p d -- w case tamperature, tc -- c allowable power dissipation, p d -- w drain current, i d -- a t c=25 c single pulse t otal gate charge, qg -- nc drain-to-source voltage, v ds -- v 2SK3818/d

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on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc reserve s the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any partic ular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. scillc strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or m alfunctions. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "typical" parameter s which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including "typic als," must be validated for each customer application by customer? technical experts. scillc shall not be held liable for any claim or suits with regard to a third party? intellectual property rights which has resulted from the use of the technical information and products mentioned above. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any o ther application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or u nauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expen ses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affi rmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.

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